MOSFET - Kaimeite

Applied Filters :

7 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Number of Channels	Length	Width	Height	Configuration	Technology	Transistor Polarity	Channel Mode	Rise Time	Fall Time	Transistor Type	Package	Subcategory	Installation style	Vds-drain source breakdown voltage	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time
	2SK2381		GET PRICE	PDF RFQ	7,800 In-stock	Toshiba Semiconductor	MOSFET 220NIS2 PLN, DISCON(08-10)/PHASE-OUT(11-01)/OB...	20 V	TO-220FP-3	- 55 C	+ 150 C	1 Channel	10 mm	4.5 mm	15 mm	Single	Si	N-Channel	Enhancement	15 ns	15 ns		Reel		Through Hole	200 V	5 A	800 mOhms	25 W	67 ns	41 ns
	2SK2382		GET PRICE	PDF RFQ	7,881 In-stock	Toshiba Semiconductor	MOSFET 220NIS2 PLN,ACTIVE,DISCON(08-10)/PHASE-OUT...					1 Channel				Single	Si	N-Channel
	2SK2545		GET PRICE	PDF RFQ	42,211 In-stock	Toshiba Semiconductor	MOSFET 220NIS2 PLN,ACTIVE,DISCON(08-10)/PHASE-OUT...					1 Channel				Single	Si	N-Channel						MOSFETs
	2SK2699		GET PRICE	PDF RFQ	13,555 In-stock	Toshiba Semiconductor	Silicon N Channel MOS Type (π−MOSV)	30 V		- 55 C	+ 150 C	1 Channel	15.5 mm	4.5 mm	20 mm	Single	Si	N-Channel	Enhancement	45 ns	65 ns				Through Hole	600 V	12 A	650 mOhms	150 W	150 ns	35 ns
	2SK2750		GET PRICE	PDF RFQ	23,356 In-stock	Toshiba Semiconductor	MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...	30 V		- 55 C	+ 150 C	1 Channel	10.16 mm	4.45 mm	15.1 mm	Single	Si	N-Channel	Enhancement	15 ns	15 ns	1 N-Channel	Reel		Through Hole	600 V	3.5 A	2.2 Ohms	35 W	8 ns	2 ns
	2SK2915		GET PRICE	PDF RFQ	14,555 In-stock	Toshiba Semiconductor	Silicon N Channel MOS Type (π−MOSV)	30 V		- 55 C	+ 150 C	1 Channel	15.5 mm	4.5 mm	20 mm	Single	Si	N-Channel	Enhancement	50 ns	60 ns				Through Hole	600 V	16 A	400 mOhms	150 W	155 ns	35 ns
	2SK2837		GET PRICE	PDF RFQ	7,500 In-stock	Toshiba Semiconductor	Silicon N Channel MOS Type (π−MOSV)	30 V		- 55 C	+ 150 C	1 Channel	15.5 mm	4.5 mm	20 mm	Single	Si	N-Channel	Enhancement	30 ns	50 ns				Through Hole	500 V	20 A	270 mOhms	150 W	71 ns	23 ns

Page 1 / 1