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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Minimum Operating Temperature | Maximum Operating Temperature | Number of Channels | Length | Width | Height | Configuration | Technology | Transistor Polarity | Channel Mode | Rise Time | Fall Time | Transistor Type | Package | Installation style | Vds-drain source breakdown voltage | Id-continuous drain current | Rds On-drain source on-resistance | Pd-power dissipation | Typical shutdown delay time | Typical on-delay time | |
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13,555
In-stock
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Toshiba Semiconductor | Silicon N Channel MOS Type (π−MOSV) | 30 V | - 55 C | + 150 C | 1 Channel | 15.5 mm | 4.5 mm | 20 mm | Single | Si | N-Channel | Enhancement | 45 ns | 65 ns | Through Hole | 600 V | 12 A | 650 mOhms | 150 W | 150 ns | 35 ns | |||||
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23,356
In-stock
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Toshiba Semiconductor | MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... | 30 V | - 55 C | + 150 C | 1 Channel | 10.16 mm | 4.45 mm | 15.1 mm | Single | Si | N-Channel | Enhancement | 15 ns | 15 ns | 1 N-Channel | Reel | Through Hole | 600 V | 3.5 A | 2.2 Ohms | 35 W | 8 ns | 2 ns | |||
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14,555
In-stock
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Toshiba Semiconductor | Silicon N Channel MOS Type (π−MOSV) | 30 V | - 55 C | + 150 C | 1 Channel | 15.5 mm | 4.5 mm | 20 mm | Single | Si | N-Channel | Enhancement | 50 ns | 60 ns | Through Hole | 600 V | 16 A | 400 mOhms | 150 W | 155 ns | 35 ns | |||||
|
GET PRICE |
7,500
In-stock
|
Toshiba Semiconductor | Silicon N Channel MOS Type (π−MOSV) | 30 V | - 55 C | + 150 C | 1 Channel | 15.5 mm | 4.5 mm | 20 mm | Single | Si | N-Channel | Enhancement | 30 ns | 50 ns | Through Hole | 500 V | 20 A | 270 mOhms | 150 W | 71 ns | 23 ns |