MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Minimum Operating Temperature	Maximum Operating Temperature	Number of Channels	Length	Width	Height	Configuration	Technology	Transistor Polarity	Channel Mode	Rise Time	Fall Time	Installation style	Vds-drain source breakdown voltage	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time
	2SK2699		GET PRICE	PDF RFQ	13,555 In-stock	Toshiba Semiconductor	Silicon N Channel MOS Type (π−MOSV)	30 V	- 55 C	+ 150 C	1 Channel	15.5 mm	4.5 mm	20 mm	Single	Si	N-Channel	Enhancement	45 ns	65 ns	Through Hole	600 V	12 A	650 mOhms	150 W	150 ns	35 ns
	2SK2915		GET PRICE	PDF RFQ	14,555 In-stock	Toshiba Semiconductor	Silicon N Channel MOS Type (π−MOSV)	30 V	- 55 C	+ 150 C	1 Channel	15.5 mm	4.5 mm	20 mm	Single	Si	N-Channel	Enhancement	50 ns	60 ns	Through Hole	600 V	16 A	400 mOhms	150 W	155 ns	35 ns

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