MOSFET - Kaimeite

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5 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Number of Channels	Length	Width	Height	Configuration	Technology	Transistor Polarity	Channel Mode	Rise Time	Fall Time	Package	Installation style	Factory packaging quantity	unit weight	RoHS	Vds-drain source breakdown voltage	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time
	2SK2381		GET PRICE	PDF RFQ	7,800 In-stock	Toshiba Semiconductor	MOSFET 220NIS2 PLN, DISCON(08-10)/PHASE-OUT(11-01)/OB...	20 V	TO-220FP-3	- 55 C	+ 150 C	1 Channel	10 mm	4.5 mm	15 mm	Single	Si	N-Channel	Enhancement	15 ns	15 ns	Reel	Through Hole				200 V	5 A	800 mOhms	25 W	67 ns	41 ns
	2SK2699		GET PRICE	PDF RFQ	13,555 In-stock	Toshiba Semiconductor	Silicon N Channel MOS Type (π−MOSV)	30 V		- 55 C	+ 150 C	1 Channel	15.5 mm	4.5 mm	20 mm	Single	Si	N-Channel	Enhancement	45 ns	65 ns		Through Hole				600 V	12 A	650 mOhms	150 W	150 ns	35 ns
	2SK2915		GET PRICE	PDF RFQ	14,555 In-stock	Toshiba Semiconductor	Silicon N Channel MOS Type (π−MOSV)	30 V		- 55 C	+ 150 C	1 Channel	15.5 mm	4.5 mm	20 mm	Single	Si	N-Channel	Enhancement	50 ns	60 ns		Through Hole				600 V	16 A	400 mOhms	150 W	155 ns	35 ns
	2SK2837		GET PRICE	PDF RFQ	7,500 In-stock	Toshiba Semiconductor	Silicon N Channel MOS Type (π−MOSV)	30 V		- 55 C	+ 150 C	1 Channel	15.5 mm	4.5 mm	20 mm	Single	Si	N-Channel	Enhancement	30 ns	50 ns		Through Hole				500 V	20 A	270 mOhms	150 W	71 ns	23 ns
	2SK3561	5+ $1.500		PDF RFQ	12,350 In-stock	Toshiba	MOSFET N-Ch 500V 8A Rdson 0.85 Ohm					1 Channel	10 mm	4.5 mm	15 mm	Single	Si	N-Channel					Through Hole	50	2 g	N	500 V	8 A	850 mOhms

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