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Package / Case :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGWA25S120DF3
1+
$9.520
10+
$8.610
25+
$8.210
100+
$7.120
RFQ
200
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO247-3 + 175 C Tube 375 W Single 1.2 kV 1.6 V 50 A 250 nA +/- 20 V
STGW25S120DF3
1+
$8.570
10+
$7.750
25+
$7.390
100+
$6.410
RFQ
180
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO247-3 + 175 C Tube 375 W Single 1.2 kV 1.6 V 50 A 250 nA +/- 20 V
STGWA25M120DF3
1+
$9.510
10+
$8.600
25+
$8.200
50+
$7.630
RFQ
597
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-247-3 + 175 C Tube 375 W Single 1.2 kV 1.85 V 50 A 250 nA 20 V
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