- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Id - Continuous Drain Current :
-
- 1.4 A (1)
- 1.6 A (2)
- 1.67 A (1)
- 1.9 A (3)
- 100 mA (1)
- 12 A (1)
- 17 A (1)
- 170 mA (4)
- 18 A (1)
- 2.24 A (1)
- 2.3 A (1)
- 2.4 A (1)
- 2.6 A (2)
- 2.9 A (2)
- 200 mA (2)
- 29.5 A (1)
- 3.5 A (1)
- 3.6 A (1)
- 3.8 A (1)
- 320 mA (4)
- 4 A (1)
- 4.2 A (2)
- 42 A (2)
- 44 A (1)
- 450 mA (2)
- 500 mA (1)
- 51.7 A (1)
- 55 A (2)
- 6.4 A (1)
- 600 mA (1)
- 7.7 A (1)
- 700 mA (1)
- 8.3 A (1)
- 8.5 A (1)
- 800 mA (2)
- 900 mA (1)
- 98 A (1)
- Rds On - Drain-Source Resistance :
-
- 1.8 Ohms (3)
- 10 Ohms (4)
- 100 mOhms (2)
- 115 mOhms (2)
- 122 mOhms (1)
- 125 mOhms (2)
- 13.5 mOhms (2)
- 14.5 mOhms (1)
- 140 mOhms (1)
- 16 mOhms (2)
- 22 mOhms (1)
- 220 mOhms (3)
- 230 mOhms (1)
- 250 mOhms (4)
- 28 mOhms (2)
- 350 mOhms (1)
- 4 Ohms (3)
- 4.5 Ohms (3)
- 450 mOhms (1)
- 54 mOhms (1)
- 540 mOhms (1)
- 6 Ohms (3)
- 6.9 mOhms (1)
- 650 mOhms (1)
- 68 mOhms (1)
- 69 mOhms (1)
- 750 mOhms (1)
- 77 mOhms (1)
- 900 mOhms (2)
- 99 mOhms (2)
54 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
46,520
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V | - 20 V, + 20 V | Tape & Reel (TR) | AEC-Q101 | 1 Channel | 100 W | N-Channel | 100 V | 51.7 A | 22 mOhms | 1 V | 21 nC | 2500 | Green available | |||||||||
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6,724
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 320 mA | 4 Ohms | Enhancement | ||||||||||
|
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5,913
In-stock
|
Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 320 mA | 4.5 Ohms | Enhancement | ||||||||||
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3,881
In-stock
|
Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 900 mA | 650 mOhms | Enhancement | ||||||||||
|
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9,423
In-stock
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Diodes Incorporated | MOSFET 100V N-Channel 2A MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.9 A | 250 mOhms | Enhancement | ||||||||||
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2,473
In-stock
|
Diodes Incorporated | MOSFET 100V 175c N-Ch FET 28mOhm 10V 55A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2 V | 36 nC | Enhancement | ||||||||
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6,580
In-stock
|
Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 800 mA | 900 mOhms | Enhancement | ||||||||||
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3,536
In-stock
|
Diodes Incorporated | MOSFET N-Chnl 100 V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 mA | 10 Ohms | Enhancement | ||||||||||
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2,854
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 230 mOhms | Enhancement | ||||||||||
|
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4,492
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 250 mOhms | Enhancement | ||||||||||
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4,710
In-stock
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Diodes Incorporated | MOSFET 100V N-CH MOSFET 100V 12A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 12 A | 140 mOhms | 2 V | 9.7 nC | Enhancement | ||||||||
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2,550
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 600 mA | 4.5 Ohms | Enhancement | ||||||||||
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3,805
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 320 mA | 4.5 Ohms | Enhancement | ||||||||||
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1,487
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.67 A | 750 mOhms | Enhancement | ||||||||||
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1,715
In-stock
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Diodes Incorporated | MOSFET 100V N-Channel 2.9A MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4 A | 125 mOhms | Enhancement | ||||||||||
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4,493
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 69 mOhms | 2 V | 25.2 nC | Enhancement | ||||||||
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9,853
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | 16 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 220 mOhms | 1 V | 8.3 nC | Enhancement | ||||||||
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1,891
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 29.5 A | 14.5 mOhms | 1.4 V | 53.7 nC | Enhancement | ||||||||
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2,484
In-stock
|
Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 16 mOhms | 2 V | 33.3 nC | Enhancement | ||||||||
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1,494
In-stock
|
Diodes Incorporated | MOSFET MOSFET N-CH 100V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7.7 A | 100 mOhms | Enhancement | ||||||||||
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2,490
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 125W | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2.5 V | 36 nC | Enhancement | ||||||||
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18,753
In-stock
|
Diodes Incorporated | MOSFET 100V 360mW | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 6 Ohms | Enhancement | ||||||||||
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1,243
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | 16 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 220 mOhms | 2.5 V | 8.3 nC | Enhancement | ||||||||
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1,774
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 500 mA | 4 Ohms | Enhancement | ||||||||||
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872
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.4 A | 450 mOhms | Enhancement | ||||||||||
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828
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.6 A | 77 mOhms | 1.5 V | 10 nC | Enhancement | ||||||||
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51,640
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 100Vdgr 20Vgss 200mA | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 10 Ohms | 800 mV | Enhancement | |||||||||
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665
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 800 mA | 1.8 Ohms | Enhancement | ||||||||||
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866
In-stock
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Diodes Incorporated | MOSFET N-Chan 100V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.4 A | 125 mOhms | 4 V | 9.6 nC | Enhancement | ||||||||
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2,366
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 320 mA | 4 Ohms | Enhancement |
