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- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10.5 nC (5)
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- 7 nC (1)
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- 85 nC (1)
- 86 nC (5)
- Applied Filters :
129 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
177
In-stock
|
Toshiba | MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A | 30 V | SMD/SMT | DFN8x8-5 | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 87 mOhms | 3 V | 105 nC | Enhancement | ||||
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|
GET PRICE |
86,000
In-stock
|
Toshiba | MOSFET N-Ch 7A 60W FET 600V 490pF 15nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 500 mOhms | 2.7 V to 3.7 V | 15 nC | Enhancement | |||
|
|
GET PRICE |
1,190
In-stock
|
Toshiba | MOSFET DTMOSIV-High Speed 600V 88mVGS=10V) | 30 V | SMD/SMT | DFN8x8-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 78 mOhms | 3.5 V | 65 nC | Enhancement | |||
|
|
GET PRICE |
950
In-stock
|
Toshiba | MOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A | 30 V | SMD/SMT | DFN8x8-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 78 mOhms | 2.7 V to 3.7 V | 86 nC | Enhancement | |||
|
|
GET PRICE |
1,201
In-stock
|
Toshiba | MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 380 mOhms | 2.7 V to 3.7 V | 20 nC | Enhancement | |||
|
|
GET PRICE |
210
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 40mOhm 61.8A 400W 6500pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 61.8 A | 33 mOhms | 2.7 V to 3.7 V | 180 nC | DTMOSIV | ||||
|
|
GET PRICE |
220
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF | 30 V | Through Hole | TO-3PL-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 100 A | 15 mOhms | 2.7 V to 3.7 V | 360 nC | DTMOSIV | |||
|
|
GET PRICE |
1,432
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 420 mOhms | 2.7 V to 3.7 V | 18.5 nC | DTMOSIV | |||
|
|
GET PRICE |
1,074
In-stock
|
Toshiba | MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6 A | 1.25 Ohms | 4 V | 16 nC | Enhancement | |||
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|
GET PRICE |
20,000
In-stock
|
Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 62 mOhms | 3 V | 135 nC | Enhancement | |||
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|
GET PRICE |
89
In-stock
|
Toshiba | MOSFET N-Ch 61.8A 400W FET 600V 3500pF 180nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 61.8 A | 33 mOhms | 2.7 V to 3.7 V | 180 nC | Enhancement | ||||
|
|
GET PRICE |
1,708
In-stock
|
Toshiba | MOSFET N-Ch MOS 5A 500V 80W 490pF 1.5 Ohm | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.3 Ohms | 4.4 V | 11 nC | Enhancement | |||
|
|
GET PRICE |
588
In-stock
|
Toshiba | MOSFET N-Ch 7A 30W FET 600V 490pF 15nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 7 A | 500 mOhms | 2.7 V to 3.7 V | 15 nC | Enhancement | ||||
|
|
GET PRICE |
298
In-stock
|
Toshiba | MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC | 30 V | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 265 mOhms | 2.7 V to 3.7 V | 25 nC | Enhancement | ||||||
|
|
GET PRICE |
394
In-stock
|
Toshiba | MOSFET MOSFET N-CH 500V, 5A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.5 Ohms | ||||||
|
|
GET PRICE |
102
In-stock
|
Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 150 mOhms | 3 V | 55 nC | Enhancement | |||
|
|
GET PRICE |
49
In-stock
|
Toshiba | MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | Enhancement | ||||
|
|
GET PRICE |
445
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 600V 380pF | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.4 A | 770 mOhms | 2.7 V to 3.7 V | 10.5 nC | DTMOSIV | |||
|
|
GET PRICE |
66
In-stock
|
Toshiba | MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 3.7 V | 110 nC | Enhancement | |||
|
|
GET PRICE |
65
In-stock
|
Toshiba | MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | Enhancement | ||||
|
|
GET PRICE |
615
In-stock
|
Toshiba | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | Enhancement | |||
|
|
GET PRICE |
133
In-stock
|
Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 105 mOhms | 2.5 V | 40 nC | Enhancement | |||
|
|
GET PRICE |
14,200
In-stock
|
Toshiba | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 10 A | 700 mOhms | 4 V | 46 nC | Enhancement | |||
|
|
GET PRICE |
206
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 380pF10.5nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 5.4 A | 770 mOhms | 2.7 V to 3.7 V | 10.5 nC | DTMOSIV | ||||
|
|
GET PRICE |
69
In-stock
|
Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 105 mOhms | 2.5 V | 40 nC | Enhancement | |||
|
|
GET PRICE |
52
In-stock
|
Toshiba | MOSFET DTMOSIV-H/S 600V 65mOhmmax(VGS=10V) | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 3.5 V | 85 nC | Enhancement | |||
|
|
GET PRICE |
207
In-stock
|
Toshiba | MOSFET N-Ch 8A 30W FET 600V 570pF 18.5nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 420 mOhms | 2.7 V to 3.7 V | 18.5 nC | Enhancement | ||||
|
|
GET PRICE |
285
In-stock
|
Toshiba | MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 327 mOhms | 3.7 V | 20 nC | Enhancement | ||||
|
|
GET PRICE |
79
In-stock
|
Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 120 mOhms | 3 V | 60 nC | Enhancement | |||
|
|
GET PRICE |
323
In-stock
|
Toshiba | MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 300 mOhms | 2.7 V to 3.7 V | 25 nC | Enhancement |
